Advance in materials physics have benefited from progress in syntheses of artificial low-dimensional (low-D) materials: to name a few, we have witnessed such examples in two-dimensional electron gases (2DEG) of semiconductors, giant magnetoresistance in metal superlattices, and most recently Dirac electrons in graphene heterostructures. As such, the precise definition of a new class of materials often initiates a new physical phenomenon. Device Materials Physics Lab (DMPL), established in 2004 at POSTECH, categorizes our research interests into three subjects, (1) epitaxial growth of low-D materials and their heterostructures (including recent examples of 2D materials), (2) investigations of optical and electronic processes in 2D semiconductor heterostructures and (3) developments of such new types of quantum processes into novel quantum devices in large scales. Specific examples of our recent research include “epitaxial growth 2D van der Waals superlattices”, “device physics on atomically thin semiconductors”, “atomically thin 2D lasers”, “2D optical meta-materials” and “novel energy conversion vehicles based on 2D materials”.
Recent representative publications
1. “Heteroepitaxial van der Waals semiconductor superlattices”, Submitted (2020)
2. “Reconfigurable doping of atomically thin van der Waals semiconductors by light colours”, Submitted (2020).
3. “Atomically thin three-dimensional van der Waals membrane semiconductors by wafer scale growth”, Science Advances, 5, eaaw3180 (2019).
4. “Programmable writing of monolithic integrated circuits on a two-dimensional van der Waals semiconductor”, Nature Electronics, 1, 512 (2018).
5. “Generation, transport, and detection of valley-locked spin photocurrent in WSe2-graphene–Bi2Se3 heterostructures”, Nature Nanotechnology, 13, 910 (2018).
6. “Coplanar semiconductor-metal circuitry defined on MoTe2 few-layer polymorphs via heteroepitaxy, Nature Nanotechnology, 12, 1064 (2017).
7. “Enhancement of the anisotropic photocurrent in ferroelectric oxides by strain gradients”, Nature Nanotechnology, 10, 972 (2015).
8. “Interlayer orientation dependent light absorption and emission in monolayer semiconductor stacks”, Nature Communications, 6, 7372 (2015).
9. “Near-field electrical detection of optical plasmons and signle-plasmon sources”, Nature Physics, 5, 475 (2009).
Prof Moon-Ho Jo is Mueunjae Chair Professor of Dept. of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) and Associate Director of Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS). Moon-Ho Jo received his Ph.D. in Materials Science at University of Cambridge (2001), with a dissertation on electron spin tunneling in half-metallic manganites. He joined the faculty of the Department of Materials Science and Engineering at POSTECH in 2004 after a postdoctoral fellowship in Department of Chemistry/Physics at Harvard University. His current research interests include (1) atomic scale heteroepitaxial growth of semiconductors and strongly correlated materials, (2) light-matter interactions at atomically thin materials, as well as (3) electron transport and laser transport spectroscopy in atomic scale materials.
Prof Moon-Ho Jo
Prof Moon-Ho Jo is Mueunjae Chair Professor of Dept. of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) and Associate Director of Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS). Moon-Ho Jo received his Ph.D. in Materials Science at University of Cambridge (2001), with a dissertation on electron spin tunneling in half-metallic manganites. He joined the faculty of the Department of Materials Science and Engineering at POSTECH in 2004 after a postdoctoral fellowship in Department of Chemistry/Physics at Harvard University. His current research interests include (1) atomic scale heteroepitaxial growth of semiconductors and strongly correlated materials, (2) light-matter interactions at atomically thin materials, as well as (3) electron transport and laser transport spectroscopy in atomic scale materials.