세미나안내

[2018 08 17] 특별세미나 _Prof. Taishi Takenobu (Nagoya University)

Functional devices based on electrochemically doped organic polymer films and transition metal dichalcogenide monolayers

관리자 | 2018.08.14 08:49 | 조회 514


Functional devices based on electrochemically doped

organic polymer films and transition metal dichalcogenide monolayers

 

 Date: 2018. 08. 17(Fri) , 17:00 ~ 18:15

 Place: Science Building, Room.202 Multimedia Room

 Speaker: Prof. Taishi Takenobu (Nagoya University)

Host of a Seminar: Prof. Unyong Jeong

Abstract:

 

Recently, we combined electrochemical doping technique with functional devices of several materials and we successfully maximized their device performance [1-14]. Here, we applied these techniques into organic polymer films and transition metal dichalcogenide monolayers.

Organic polymer films

Due to their low-temperature solution processability, compatibility with large-area deposition techniques, intrinsic robust mechanical properties and excellent light-emitting properties, organic polymer semiconductors possess great potential as functional thin-film devices, such as field effect transistors, thermoelectric energy conversion devices and light-emitting devices. Because of these unique advantages, organic polymer films are extremely suitable for future IoT technology and large-area high-performance devices are highly required. However, in most functional devices, fine tuning of carrier concentration is key technique and, still, it is very difficult for organic polymer films to control their carrier density precisely. Here, we applied electrochemical doping techniques into organic polymer films and realized unique functionalities, i) insulator-to-metal transition induced by electrochemical doping, ii) electrochemically optimized thermoelectric energy conversion efficiency in organic polymer films and iii) highly functionalized light-emitting electrochemical cells based on organic polymers.

Transition metal dichalcogenide monolayers

2D layered materials have attracted much attention for exploring new electronic, optoelectronic, and photonic applications. Particularly, direct bandgap and unique electronic structure in monolayer transition metal dichalcogenides (TMDCs) provides a platform for exploring novel optoelectronic functionalities and devices. One of the most interesting properties of TMDCs is topological features, such as a non-centrosymmetric two-dimensional crystal, strong spin-orbit interaction, non-zero Berry curvature and resulting spin-valley coupling. Actually, circularly polarized light emission has been demonstrated. However, the fabrication of TMDC light-emitting devices are still limited, and this fundamental barrier has made investigating electroluminescence (EL) properties of TMDCs inevitably difficult. To overcome this issue, we developed the electrochemical method to dope both holes and electrons, and proposed a simple approach to form p-n junction universally in TMDCs [1-8]. Here, we apply this method into various forms of TMDCs and performed robust circularly polarized EL emission, arising from spin-valley coupling in TMDCs. Our approach paves a versatile way for using TMDCs in discovering new functional optoelectronic devices.

[1] Nano Lett. 12, 4013, (2012). [2] Adv. Mater., 24, 4392 (2012). [3] APL 103, 23505 (2013). [4] ACS Nano. 8, 923 (2014). [5] Adv. Funct. Mater., 24, 3305 (2014). [6] ACS Nano. 8, 8582 (2014). [7] Nano Lett., 14, 6437-6442 (2014). [8] Nat. Commun., 7, 12356 (2016). [9] Adv. Mater. 28, 4111 (2016). [10] APL 109, 201107 (2016). [11] Adv. Mater. 29, 1606918 (2017). [12] Adv. Mater., 29, 1606392 (2017). [13] Adv. Funct. Mater., 28, 1706860 (2018). [14] Adv. Mater. 30, 1707627 (2018).

 

Dept. of MSE / BK21+





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