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[2018 05 16] 정기세미나 11th

Spin-orbit torque materials and devices for magnetic memory applications

관리자 | 2018.05.14 09:37 | 조회 607


Spin-orbit torque materials and devices

for magnetic memory applications

 

 Date: 2018. 05. 16(WED) , 17:00 ~ 18:15

 Place: Science Building, Room.202 Multimedia Room

 Speaker: Prof. Young Keun Kim (Korea Univ.)

Host of a Seminar: Prof. Moon-Ho Jo

 


Abstract:

 

Switching magnetization direction of a ferromagnetic layer with high speed as well as low

energy consumption has drawn emerging technological interest, for example, in the area of

next generation magnetic random access memory (MRAM) applications. Lately, a new

switching principle based on spin-orbit torque (SOT) has been discovered in various sets of

heavy metal (HM)/ferromagnet (FM) thin film structures such as W (Ta, Pt)/CoFeB with

MgO capping where in-plane current injection induces magnetization reversal in

perpendicularly magnetized layer. This switching is known to be resulted from strong spinorbit

interactions. Therefore, a large number of research efforts are being pursued worldwide

to understand underlying physics, to search new sets of HM/NM material systems and device

structures, and to manipulate interfacial structures to get high SOT switching efficiencies. To

be practical for MRAM applications, there are various engineering issues to be resolved

which are related with materials and processing. The current status and future aspects of SOTrelated

materials and device research will be discussed.



Department of Materials Science and Engineering






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