세미나안내

[2018 03 28] 정기세미나 5th

Enhancement of image resolution and analytical sensitivity by latest technology in STEM and TEM

관리자 | 2018.03.26 09:33 | 조회 160


Enhancement of image resolution and analytical sensitivity by

latest technology in STEM and TEM

 

 Date: 2018. 03. 28(WED) , 17:00 ~ 18:15

 Place: Science Building, Room.202 Multimedia Room

 Speaker: Dr. Hidetaka Sawada (JEOL)

Host of a Seminar: Prof. Si-Young Choi

 

Speaker Language: English

 

Abstract:

 

Latest technology in high-end atomic-resolution electron microscope has enhanced the resolution, analytical capability, and field observation in STEM and TEM with a small energy spread of electron source by monochromater, a large convergence angle, and high sensitivity EDS (Energy Dispersive X-ray Spectrometry) by large solid angle.

The developed microscope is equipped with an ultra-stable cold field emission gun (CFEG) and spherical aberration correctors for probe and/or image forming systems.  The developed CFEG is evacuated with NEG (non-evaporative getters), a SIP (with noble pump) and two-intermediate SIPs, resulting in ultimate current stability of the CFEG.  Observation at 200 kV and 300kV can image a sub-angstrom structure, and low-kV imaging of 30-80 kV imaging is useful for soft materials to reduce the specimen damage.  The instruments have demonstrated sub-angstrom resolution at low and high acceleration voltage, and light element detection.  Ultra-high resolution STEM images were obtained using GaN[212] or Si [114] a specimen, sub-50 pm information was detected in the STEM DF image. We demonstrate experimental application results of sub-angstrom imaging using spherical aberration corrector, low kv imaging, and atomic resolution elemental mapping using EELS (Electron Energy-Loss Spectroscopy) and EDS.   In addition to atomic resolution EELS, a super-high sensitivity EDS system with the solid angle over 2[sr] has been developed by optimizing the shape of the objective lens pole piece and detector positions for a larger detection area of the detectors. Several application data of the high-resolution and EDS analysis performance with aberration corrected electron microscope are demonstrated.  The system enhances acquisition throughput for the elemental and chemical information.

 

 

Department of Materials Science and Engineering






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