세미나안내

[2017 10 11] 정기세미나 4th

Material and Device Engineering for High-Performance Halide Perovskite Solar Cells

관리자 | 2017.09.25 09:23 | 조회 291


Material and Device Engineering for High-Performance Halide Perovskite Solar Cells

 

 Date: 2017. 10. 11(WED) , 17:00 ~ 18:15

 Place: Science Building, Room.202 Multimedia Room

 Speaker: Prof. Jun Hong Noh (Korea University)

Host of a Seminar: Prof. Junwoo Son

 

Speaker Language: KOREAN

 

Abstract:

 

Inorganic-organic hybrid halide materials such as methylammonium lead iodide (MAPbI3) or formamidinium lead iodide (FAPbI3) have emerged as an innovative photovoltaic semiconductor for the future photovoltaic systems which require low-cost fabrication process and high-power conversion efficiency (PCE). Because the halides with perovskite crystal structure are not only possible to fabricate the solid-state solar cells through low-cost solution process at low temperature under 200 oC but they also have excellent material properties to utilize for high PCE such as tunable band gap, high absorption coefficient, low exciton binding energy, superior charge-transport. The perovskite solar cells have showed unprecedented progress in PCE reaching 22 % in last several years. This progress is attributed to developments in terms of device architecture, perovskite materials, and fabrication process based on material engineering. In particular, since it is difficult to form a desired perovskite film due to a unique self-assembly crystallization behavior of perovskite crystals, a key factor to achieve the high performance is how to make a high-quality perovskite film with compact morphology and low trap density on n(p)-type semiconductor layers. In order to control such material factors of perovskite halide crystal films, we have introduced mediator which retards direct reaction between organic halide and inorganic halide and influences on crystal growth. We demonstrated that dimethyl sulfoxide (DMSO) is an excellent mediator for formation of high-quality halide thin film. The iodide management also was performed using I3- ions to reduce internal trap density in the halide film. In addition to PCE, recently, long-term stability of the perovskite solar cells is big challenge. The stability of PSC is not only related to halide materials themselves but also is dependent on n(p)-type oxide and organic semiconducting layers. In this talk, material engineering of perovskite halides and oxide semiconductors will be introduced for achieving efficient and stable perovskite solar cells by formation of high-quality perovskite halide crystal thin film and novel oxide semiconducting film.

 

Department of Materials Science and Engineering





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