세미나안내

[2014 03 20] 특별세미나 (BK21PLUS)

Mechanisms of resistive switching phenomena in oxide materials

MSE Graduate Students and Researchers

관리자 | 2014.03.17 13:09 | 조회 2735


 

Reception: MSE Graduate Students and Researchers

Reference: MSE Professors

Subject: MSE Special Seminar_Post-Doc.Jae Sung Lee

 

Date: 2014. 3. 20 (THU), 16:00 ~

■ Place: Engineering BuildingⅠ, Room. 202 Multimedia Room

■ Title: Mechanisms of resistive switching phenomena in oxide materials

■ Speaker: Jae Sung Lee(Korea Institute for Advanced Study)

■ Host of a Seminar: Prof. Sang Ho Oh

 

 

Abstract:

: Resistive switching (RS) phenomena refer to reversible resistance changes between two metastable resistance states driven by an external voltage. Recently, there has been a flurry of investigations into RS due to their inherent scientific interest and potentials applications for memory devices. Since RS phenomena have been observed in numerous material systems including oxides, the detailed RS mechanism for a specific material is different from each other and still remains to be elucidated. However, some general principles for RS mechanisms have also been found. In this presentation, I will focus on RS in oxide materials and review the general mechanisms for two types of RS: unipolar and bipolar RS where the resistive switching processes between two resistance states are independent of the polarity of an external voltage and require two opposite polarities, respectively. I will explain general microscopic origins leading to RS phenomena based on the migration of oxygen vacancies. In addition, I will also discuss that the macroscopic properties of unipolar RS can be understood from the collective behaviors of microscopic switching elements. I will show that these collective behaviors are independent of materials, based on the new percolation model called random circuit breaker (RCB) network model.

 

 

Department of Materials Science and Engineering / MSE BK21+




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