세미나안내

[2014 02 24] 특별세미나

Towards Storage Class Memory: 3-D Crosspoint Access Devices Using Mixed-Ionic-Electronic-Conduction (MIEC)

MSE Graduate Students and Researchers

관리자 | 2013.12.23 09:21 | 조회 3053


Reception: MSE Graduate Students and Researchers

Reference: MSE Professors

Subject: MSE Special Seminar_Dr. Geoffrey W. Burr

 

 Date: 2014. 02. 24 (Tue), 15:00 ~ 16:00

 Place: Science Building, Room.202 Multimedia Room

 Title: Towards Storage Class Memory: 3-D Crosspoint Access Devices Using

Mixed-Ionic-Electronic-Conduction (MIEC)

 Speaker: Dr. Geoffrey W. Burr (IBM Almaden Research Center.)

Host of a Seminar: Prof. Hyunsang Hwang

 

Abstract:

Memory technology is currently going through a period of rapid change, as new non-volatile memories (NVM) emerge that complement, augment, (and potentially could even replace) the traditional triad of SRAM, DRAM, and Flash.  Storage-class memory (SCM) is an emerging memory category that seeks to combine the benefits of solid-state memory, such as high performance and robustness, with the long-term retention and low cost of conventional hard-disk magnetic storage.   In fact, the potential exists for two entirely new and distinct levels within the memory and storage hierarchy, termed M-SCM and S-SCM, located within the large gap in access times between off-chip DRAM and NAND Flash.

 

However, such SCM technologies will require large nonvolatile memory arrays that can be manufactured at a very low cost per bit.  One path to this goal is to stack multiple layers of NVM crosspoint arrays in 3D. In such an architecture, the NVM element at each crosspoint intersection must be in series with an access device, whose strong nonlinearity makes it possible to drive high current density through selected cells while maintaining ultra-low leakage through unselected cells.  3D stacking is only possible if both the NVM and the access device are fully compatible with a Back-End-Of-the-Line (BEOL) fabrication process.

 

This talk will provide both an overview of the Storage Class Memory concept and a review of our work on novel access devices based on Cu-containing Mixed-Ionic-Electronic-Conduction (MIEC) materials.  Our MIEC-based access devices not only meet all of the above requirements but also support the bipolar memory operation critical for NVM candidates such as Resistance RAM (RRAM) and Spin-Torque-Transfer Magnetic RAM (STT-MRAM). Extensive experimental results on prototype MIEC devices will be shown, addressing topics such as cycling endurance, array fabrication and yield, integration with Phase Change Memory (PCM), speed, and scalability.

 

Biography:

Geoffrey W. Burr received his Ph.D. in Electrical Engineering from the California Institute of Technology in 1996 under the supervision of Professor Demetri Psaltis.   Since that time, Dr. Burr has worked at the IBM Almaden Research Center in San Jose, California, where he is currently a Research Staff Member.   He has worked in a number of diverse areas, including holographic data storage, photon echoes, computational electromagnetics, nanophotonics, and computational lithography.   Dr. Burr's current research interests include non-volatile memory, reprogrammable logic, and cognitive computing.  An IEEE Senior Member, Geoff is also a member of MRS, SPIE, OSA, Tau Beta Pi, and Eta Kappa Nu. 

 

 

Department of Materials Science and Engineering



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