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[2013 12 11] 정기세미나 12th

Atomic Scale Measurements of Structural Order Parameters in Transition Metal Oxide thin Films by Aberration Corrected Microscopy

MSE Graduate Students and Researchers

관리자 | 2013.12.06 15:52 | 조회 3410


Reception: MSE Graduate Students and Researchers

Reference: MSE Professors

Subject: The 12th(Last) Seminar - Fall Semester, 2013 


 Date: 2013. 12. 11(Wed), 17:00 ~ 18:15

 Place: Science Building, Room.202 Multimedia Room

 Title: Atomic Scale Measurements of Structural Order Parameters in Transition Metal Oxide thin Films by Aberration Corrected Microscopy

 Speaker: Ph.D. Kim Young Min (Korea Basic Science Institute)

Host of a Seminar: Prof. Sang Ho Oh

Speaker Language: ENGLISH

 

Abstract:

N

ovel functionalities in transition metal oxide (TMO) thin films that are absent in their bulk equilibrium phases are manifested by strong coupling effects between structural order parameter fields, which can be corroborated with the evidence of the subtle distortions such as oxygen octahedral tilt, lattice strain and polarization1, 2. To understand fundamental science of order parameter-structure couplings and optimize physical properties of the materials, therefore, the ability to control and measure these structural parameters with atomic precision is required. In this talk, I will discuss recent results on structural and chemical imaging of TMO heterostructures by aberration-corrected Scanning Transmission Electron Microscopy (STEM) combined with Electron Energy Loss Spectroscopy (EELS). In the real-space local crystallography approach, STEM measures position shifts of atomic columns with sub-5 pm precision3. This technique allows minute displacements of atoms within the subunit-cell level to be probed and the structural order parameter fields to be directly visualized. I will demonstrate the applications of local crystallographic mapping by STEM for deciphering functional properties of BiFeO3-La1-xSrxMO3 heterostructures, which show exciting interplay between octahedral tilt distortions, dielectric properties, and polarization that in some cases can stabilize antiferroelectric form4. The application further extends to demonstrate that in some systems local vacancy concentrations can be determined quantitatively from lattice spacings, bringing the concept of chemical expansivity to the atomic level3.

 

References

1. Borisevich AY et al.,  Acs Nano 2010, 4(10): 6071-6079.

2. Borisevich AY et al., Phys. Rev. Lett. 2010, 105(8).

3. Kim Y-M et al., Nat. Mater. 2012, 11(10): 888-894.

4. Kim Y-M et al.,  Adv. Mater. 2013, 25(17): 2497-2504.

 

 

Department of Materials Science and Engineering



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