세미나안내

[2015 12 02] 정기세미나 12th

Low dimensional group-IV (C, Si, Ge) nanomaterials

MSE Graduate Students and Researchers

관리자 | 2015.12.01 15:18 | 조회 1409


 Date: 2015. 12. 02(Wed), 17:00 ~ 18:15

 Place: Science Building, Room.202 Multimedia Room

 Title: Low dimensional group-IV (C, Si, Ge) nanomaterials

 Speaker: Prof. Dongmok whang (SKKU)

Host of a Seminar: Prof. Sang Ho Oh

 

Speaker Language: KOREAN

 

Abstract:

Low-dimensional nanomaterials of group-IV materials, including, Si, Ge, C, and their alloy and heterostructures has been grown by chemical vapor deposition (CVD) using metal catalyst. Here we present our recent efforts for the metal-free growth of 0D, 1D, and 2D nanostructures of the group-IV materials and their possible applications. In particular, we will focus on the growth of single-crystal monolayer graphene on hydrogen-terminated germanium (Ge) surface. A single-crystal Ge substrate is a promising candidate for the growth of single-crystal graphene, because of (i) its catalytic activity for the catalytic decomposition of the formation of graphitic carbon on the surface; (ii) the extremely low solubility of carbon in Ge even at its melting temperature, enabling growth of complete monolayer graphene; (iii) the anisotropic atomic arrangement of single crystal Ge surface, enabling aligned growth of multiple seeds; (iv) the availability of a large area single-crystal surface via epitaxial Ge growth on Si wafers. We observed that well defined atomic arrangement on the single crystal Ge surface enabled aligned growth of multiple seeds which can merge to single-crystal graphene. Furthermore very weak van der Waals interaction between graphene and underlying Ge surface enabled facile dry transfer of graphene and recycling the Ge/Si wafer for continuing growth.

 

            Department of Materials Science and Engineering



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